New 62mm package in Infineons CoolSiC portfolio helps engineers to achieve higher efficiency and power density
Munich, Germany 20 November, 2023 Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the expansion of its CoolSiC 1200 V and 2000 V MOSFET module families with a new industry-standard package. The proven 62mm device is designed in half-bridge topology and is based on the recently introduced and advanced M1H silicon carbide (SiC) MOSFET technology. The package enables the use of SiC for mid-power applications from 250 kW where silicon reaches the limits of power density with IGBT technology. Compared to a 62mm IGBT module, the list of applications now additionally includes solar, server, energy storage, EV charger, traction, commercial induction cooking and power conversion systems.