New 62mm package in Infineons CoolSiC portfolio helps engineers to achieve higher efficiency and power density
Munich, Germany 20 November, 2023 Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the expansion of its CoolSiC 1200 V and 2000 V MOSFET module families with a new industry-standard package. The proven 62mm device is designed in half-bridge topology and is based on the recently introduced and advanced M1H silicon carbide (SiC) MOSFET technology. The package enables the use of SiC for mid-power applications from 250 kW where silicon reaches the limits of power density with IGBT technology. Compared to a 62mm IGBT module, the list of applications now additionally includes solar, server, energy storage, EV charger, traction, commercial induction cooking and power conversion systems.
New 62mm package in Infineons CoolSiC portfolio helps engineers to achieve higher efficiency and power density